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INTEGRATED CIRCUITS
DATA SHEET
TZA3047A; TZA3047B 30 Mbits/s up to 1.25 Gbits/s laser drivers
Product specification 2003 Jun 05
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
CONTENTS FEATURES 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 8 9 10 General Control features Protection features APPLICATIONS GENERAL DESCRIPTION ORDERING INFORMATION BLOCK DIAGRAM PINNING FUNCTIONAL DESCRIPTION Data and clock input Retiming Pulse width adjustment Modulator output stage Dual-loop control Average loop control Direct current setting Soft start Alarm functions Enable Reference block LIMITING VALUES THERMAL CHARACTERISTICS DC CHARACTERISTICS 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.1.5 12.1.6 12.2 12.3 12.4 13 14 15 15.1 15.2 15.3 15.4 15.5 16 17 18
TZA3047A; TZA3047B
AC CHARACTERISTICS APPLICATION INFORMATION Design equations Bias and modulation currents Average monitor current and extinction ratio Dual-loop control Alarm operating current Alarm monitor current Pulse width adjustment TZA3047A with dual-loop control TZA3047B with dual-loop control TZA3047B with average loop control BONDING PAD LOCATIONS PACKAGE OUTLINE SOLDERING Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods DATA SHEET STATUS DEFINITIONS DISCLAIMERS
2003 Jun 05
2
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
1 1.1 FEATURES General 1.3
TZA3047A; TZA3047B
Protection features
* Alarm function on operating current * Alarm function on monitor current * Enable function on bias and modulation currents * Soft start on bias and modulation currents. 2 APPLICATIONS
* 30 Mbits/s to 1.25 Gbits/s * Bias current up to 100 mA * Modulation current up to 100 mA * Rise and fall times typical 120 ps * Jitter below 30 ps (peak-to-peak value) * Modulation output voltage up to 2 V dynamic range * 1.2 V minimum voltage on the modulation output pin and 0.4 V minimum voltage on pin BIAS * Retiming function via external clock with disable option * Pulse width adjustment function with disable option * Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) compatible data and clock inputs * Internal common mode voltage available for AC-coupled data and clock inputs and for single-ended applications * 3.3 V supply voltage * TZA3047A: AC-coupled laser for 3.3 V laser supply * TZA3047B: DC-coupled laser for 3.3 V and 5 V laser supply. 1.2 Control features
* SDH/SONET optical transmission systems. 3 GENERAL DESCRIPTION
The TZA3047 is a fully integrated laser driver for optical transmission systems with data rates up to 1.25 Gbits/s. The TZA3047 incorporates all the necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. The dual-loop controls the average monitor current in a programmable range from 150 A to 1300 A and the extinction ratio in a programmable range from 5 to 15 (linear scale). The design is made in the Philips BiCMOS RF process and is available in a HBCC32 package or as bare die. The TZA3047A is intended for use in an application with an AC-coupled laser diode with a 3.3 V laser supply voltage. The TZA3047B is intended for use in an application with a DC-coupled laser diode for both 3.3 and 5 V laser supply voltages.
* Dual-loop control for constant and accurate optical average power level and extinction ratio * Optional average power loop control (up to 1.25 Gbits/s) * Optional direct setting of modulation and bias currents. 4 ORDERING INFORMATION
PACKAGE TYPE NUMBER NAME TZA3047AVH TZA3047BVH TZA3047UH HBCC32 HBCC32 - DESCRIPTION plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm bare die; 2 560 x 2 510 x 380 m VERSION SOT560-1 -
2003 Jun 05
3
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
5 BLOCK DIAGRAM
TZA3047A; TZA3047B
handbook, full pagewidth
AVR 32 (57)
ER 31 (56)
GNDCCB (51, 53)
MODOUT
MODIN
BIASOUT
BIASIN 27 (49)
MON 26 (48)
ACDC (46) (44, 45) 25 VCCO BIAS
30 (55)
29 (52)
28 (50)
VCCA VCCD
1 (1, 2) dual loop: IER = 1.2 V/RER average loop: ER = GND
100 A
100 A V/I 100 mA/V
IBIAS
(43) 24
2 (3, 4)
CURRENT CONVERSION Ione
Izero V/I 100 mA/V
23
GND
IMON
CONTROL BLOCK 100 100 (40, 41) 22 (37, 39) 21 (31, 32) 20 20 k (29, 30) 19 100 MUX D 20 k 20 k VCCD - 1.32 V 10 k FF 100 C disable retiming: VCIN, VCINQ < 0.3 V (27) 17 PWA PULSE WIDTH ADJUST PRE AMP POST AMP 18 (28, 33, 35, 36, 42) LA LA LAQ LAQ GND GNDO
DIN
3 (5)
DINQ TEST CIN GNDRF CINQ GND GNDESD ALRESET
4 (6) 5 (11) 6 (12) (7, 8, 9, 10, 26) 7 (13) 8 (14, 47) 9 (15) 20 k
Imod
TZA3047A TZA3047B
(20, 22, 34, 38, 54) Iav(MON)/12.5 ALARM OPERATING CURRENT R ALARM MONITOR CURRENT R V AND I REFERENCE Q i.c.
1.4 V
IBIAS /750
3.3 V 20 k
Imod/1500
+
Q
1.4 V
enable
(26)
GNDRF
10 (16) ENABLE
(17) GNDDFT
11 (18) ALOP
12 (19) ALMON
13 (21) MAXOP
14 (23)
15 (24) 16 (25)
MDB314
VTEMP MAXMON RREF
The numbers in parenthesis refer to the bare die version.
Fig.1 Block diagram.
2003 Jun 05
4
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
6 PINNING SYMBOL GND VCCA VCCA VCCD VCCD DIN DINQ GNDRF GNDRF GNDRF GNDRF TEST CIN CINQ GND GNDESD ALRESET ENABLE GNDDFT ALOP ALMON i.c. MAXOP i.c. VTEMP MAXMON RREF GNDRF PWA GND GNDO LAQ LAQ LAQ LAQ GNDO i.c. GNDO 2003 Jun 05 PIN die pad 1 - 2 - 3 4 - - - - 5 6 7 8 - 9 10 - 11 12 - 13 - 14 15 16 - 17 18 - 19 - 20 - - - - PAD(1)
TZA3047A; TZA3047B
DESCRIPTION
substrate common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground 1 2 3 4 5 6 7 8 9 10 11 12 13 - 14 15 16 17 18 19 20 21 22 23 24 25 26 27 - 28 29 30 31 32 33 34 35 analog supply voltage analog supply voltage digital supply voltage digital supply voltage non-inverted data input (RF input) inverted data input (RF input) ground ground ground ground test pin or test pad; must be connected to ground non-inverted clock input (RF input) inverted clock input (RF input) ground ground alarm reset input; resets ALMON and ALOP alarms enable input for modulation and bias current ground alarm output on operating current (open-drain) alarm output on monitor diode current (open-drain) internally connected threshold level input for alarm on operating current internally connected temperature dependent voltage output source threshold level input for alarm on monitor diode current reference current input; must be connected to ground with an accurate (1%) 10 k resistor ground pulse width adjustment input ground ground inverted laser modulation output (RF output); output for dummy load inverted laser modulation output (RF output); output for dummy load inverted laser modulation output (RF output); output for dummy load inverted laser modulation output (RF output); output for dummy load ground internally connected ground 5
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
SYMBOL GNDO LA i.c. LA LA LA GND GNDO BIAS VCCO VCCO ACDC GNDESD MON BIASIN BIASOUT GNDCCB MODIN GNDCCB i.c. MODOUT ER AVR Notes
PIN - 21 - - 22 - 23 - 24 25 - - - 26 27 28 - 29 - - 30 31 32
PAD(1) 36 37 38 39 40 41 - 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 ground
DESCRIPTION non-inverted laser modulation output (RF output); output for laser internally connected non-inverted laser modulation output (RF output); output for laser non-inverted laser modulation output (RF output); output for laser non-inverted laser modulation output (RF output); output for laser ground ground current source output for the laser bias current supply voltage for the output stage and the laser diode supply voltage for the output stage and the laser diode AC or DC coupled laser; note 2 ground input for the monitor photo diode (RF input) input for the bias current setting output of the control block for the bias current ground input for the modulation current setting ground internally connected output of the control block for the modulation current input for the optical extinction ratio setting input for the optical average power level setting
1. All ground pads must be connected to ground. 2. ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect this pad to ground.
2003 Jun 05
6
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
MODOUT
handbook, full pagewidth
BIASOUT
MODIN
BIASIN
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9 ALRESET
32
31
30
29
28
27
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND PWA
TZA3047A TZA3047B
21 20 19 18
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17
VCCO
MDB318
Fig.2 Pin configuration.
7 7.1
FUNCTIONAL DESCRIPTION Data and clock input
7.3
Pulse width adjustment
The TZA3047 operates with differential Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). The circuit generates an internal common mode voltage for AC-coupled data and clock inputs and for single-ended applications. If VDIN > VDINQ, the modulation current is sunk by the LA pins and corresponds to an optical `one' level of the laser. 7.2 Retiming
The on-duration of the laser current can be adjusted from -100 to +100 ps. The adjustment time is set by resistor RPWA. The maximum allowable capacitive load on pin PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to ground. 7.4 Modulator output stage
The output stage is a high-speed bipolar differential pair with typical rise and fall times of 120 ps and with a modulation current source of up to 100 mA when the LA pins are connected to VCCO. The modulation current switches between the LA and LAQ outputs. For a good RF performance the inactive branch carries a small amount of the modulation current. The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V minimum voltage. The LAQ output is optimized for the dummy load. The output stage of the TZA3047A is optimized for AC-coupled lasers and the output stage of the TZA3047B is optimized for DC-coupled lasers. The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V laser supply; 0.8 V minimum for a 5 V laser supply). 7
The retiming function synchronizes the data with the clock to improve the jitter performance. The data latch switches on the rising edge of the clock input. The retiming function is disabled when both clock inputs are below 0.3 V. At start-up the initial polarity of the laser is unknown before the first rising edge of the clock input.
2003 Jun 05
MON
AVR
ER
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
7.5 Dual-loop control 7.9
TZA3047A; TZA3047B
Alarm functions
The TZA3047 incorporates a dual-loop control for a constant, accurate and temperature-independent control of the optical average power level and the extinction ratio. The dual-loop guarantees constant optical `one' and `zero' levels which are independent of the laser temperature and the laser age. The dual-loop operates by monitoring the current of the monitor photodiode which is directly proportional to the laser emission. The `one' and `zero' current levels of the monitor diode are captured by the detector of the dual-loop control. Pin MON for the monitor photodiode current is an RF input. The average monitor current is programmable over a wide current range from 150 to 1300 A for both the dual-loop control and the average loop control. The extinction ratio is programmable from 5 to 15. The maximum allowable capacitive load on pins AVR, ER, BIASOUT and MODOUT is 100 pF. 7.6 Average loop control
The TZA3047 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a too high laser temperature. The alarm threshold levels are programmed by a resistor or a current source. In the TZA3047A, for the AC-coupled application, the operating current is equal to the bias current. In the TZA3047B, for the DC-coupled application, the operating current equals the bias current plus half of the modulation current. 7.10 Enable
A LOW level on the enable input disables the bias and modulation current sources: the laser is off. A HIGH level on the enable input or an open enable input switches both current sources on: the laser is operational. 7.11 Reference block
The average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. The average loop control is activated by short-circuiting pin ER to ground. 7.7 Direct current setting
The reference voltage is derived from a band gap circuit and is available at pin RREF. An accurate (1%) 10 k resistor has to be connected to pin RREF to provide the internal reference current. The maximum capacitive load on pin RREF is 100 pF. The reference voltage on the setting pins (MAXOP, MAXMON, PWA, ER and AVR) is buffered and derived from the band gap voltage. The output voltage on pin VTEMP reflects the junction temperature of the TZA3047, the temperature coefficient of VVTEMP equals -2.2 mV/K.
The TZA3047 can also operate in open-loop mode with direct setting of the bias and modulation currents. The bias and modulation current sources are transconductance amplifiers and the output currents are determined by the BIASIN and MODIN voltages respectively. The bias current source has a bipolar output stage with minimum output capacitance for optimum RF performance. 7.8 Soft start
At power-up the bias and modulation current sources are released when VCCA > 2.7 V and the reference voltage has reached the correct value of 1.2 V. The control loop starts with minimum bias and modulation current at power-up and when the device is enabled. The current levels increase until the MON input current matches the programmed average level and, in the case of dual-loop control, the extinction ratio.
2003 Jun 05
8
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive currents flow into the IC. SYMBOL VCCD VCCA VCCO Vo(LA) PARAMETER digital supply voltage analog supply voltage output stage supply voltage output voltage at pin LA 3.3 V laser supply TZA3047A; VCCO = 3.3 V TZA3047B; VCCO = 3.3 V TZA3047B; VCCO = 5 V Vo(LAQ) output voltage at pin LAQ TZA3047A; VCCO = 3.3 V TZA3047B; VCCO = 3.3 V TZA3047B; VCCO = 5 V VBIAS bias voltage TZA3047A; VCCO = 3.3 V TZA3047B; VCCO = 3.3 V TZA3047B; VCCO = 5 V Vn voltage on other input and output pins analog inputs and outputs digital inputs and outputs In input current on pins MAXOP, MAXMON, RREF, PWA, ER and AVR VTEMP, BIASOUT and MODOUT ALOP, ALMON and MON Tamb Tj Tstg ambient temperature junction temperature storage temperature -1.0 -1.0 0 -40 -40 -65 0 +1.0 5.0 +85 +125 +150 mA mA mA C C C -0.5 -0.5 VCCA + 0.5 VCCD + 0.5 V V CONDITION MIN. -0.5 -0.5 -0.5 1.2 0.8 1.2 1.8 1.6 2.0 0.4 0.4 0.8 5 V laser supply (TZA3047B only) -0.5 +3.5 +3.5 +3.5 +5.3 4.5 4.1 4.5 4.5 4.5 5.2 3.6 3.6 4.1 MAX. UNIT V V V V V V V V V V V V V
9 THERMAL CHARACTERISTICS In compliance with JEDEC standards JESD51-5 and JESD51-7. SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS 4 layer printed circuit board in still air with 9 plated vias connected with the heatsink and the first ground plane in the PCB HBCC32 die pad soldered to PCB VALUE 35 UNIT K/W
60
K/W
2003 Jun 05
9
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
10 DC CHARACTERISTICS Tamb = -40 to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins VCCA, VCCD and VCCO VCCA VCCD VCCO ICCA ICCD ICCO analog supply voltage digital supply voltage RF output supply voltage analog supply current digital supply current RF output supply current pins LA and LAQ open-circuit 3.3 V laser supply 5 V laser supply Pcore core power dissipation core excluding output currents Io(LA), Io(LAQ) and IBIAS; PWA and retiming off VBIAS = 3.3 V; IBIAS = 20 mA; Imod = 16 mA; note 1 Vi(DIN) = (VCCD - 2 V) to VCCD; Vi(CIN) = (VCCD - 2 V) to VCCD AC-coupled inputs note 2 8 - - 15 20 264 25 - - mA mA mW 3.3 V laser supply 5 V laser supply 3.14 3.14 3.14 4.75 30 35 3.3 3.3 3.3 5.0 40 45 3.47 3.47 3.47 5.25 50 55 V V V V mA mA
Ptot
total power dissipation
330
400
500
mW
Data and clock inputs: pins DIN and CIN Vi(p-p) Vint(cm) VIO Zi(dif) Zi(cm) Vi(CIN)(dis) input voltage swing (peak-to-peak value) internal common mode voltage input offset voltage differential input impedance common mode input impedance input voltage for disabled retiming VCIN = VCINQ 100 - -10 80 8 - - 1000 mV V mV k V
VCCD - 1.32 - 0 100 10 - +10 125 13 0.3
Monitor photodiode input: pin MON Vi(MON) Zi(MON) ERmin input voltage input impedance IMON = 50 to 2500 A IMON = 50 to 2500 A dual-loop set-up; IER > -30 A; note 3 linear scale dB scale - - 5 7 7 8.5 - dB 0.9 - 1.1 27 1.3 - V
Extinction ratio setting for dual-loop control: pins MON and ER low extinction ratio setting
2003 Jun 05
10
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
SYMBOL ERmax
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
high extinction ratio setting dual-loop set-up; IER < -10 A; note 3 linear scale dB scale 13 11 -10 15 11.8 - - - +10 - dB %
ERacc
relative accuracy of ER
temperature and VCCA variations; ER = 10; AVR = 550 A IER = -35 to -5 A; CER < 100 pF
Vref(ER) IER Iav(MON)(low)
reference voltage on pin ER current sink on pin ER
1.15 -35
1.20 -
1.25 -5
V A
Average setting for dual-loop control and average loop control: pins MON and AVR low average monitor current setting IAVR > -280 A dual-loop (ER = 5) - - - 1300 1300 - 150 150 - - +10 A A A A % average loop (pin ER to GND) - Iav(MON)(max) maximum average monitor IAVR = -15.0 A current setting dual-loop (ER = 5) relative accuracy of average current on pin MON reference voltage on pin AVR current sink on pin AVR temperature and VCCA variations; ER = 10; AVR = 550 A IAVR = -250 to -15 A; CAVR < 100 pF 1200 -10
average loop (pin ER to GND) 1200 Iav(MON)
Vref(AVR) Isink(AVR)
1.15 -280
1.20 - - -
1.25 -15 -200 -
V A A A
Control loop modulation output: pin MODOUT Isource(MODOUT) source current Isink(MODOUT) sink current VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF VBIASIN = 0.5 to 1.5 V VBIAS = VCCO = 3.3 V VBIAS = 4.1 V; VCCO = 5.0 V Isource(BIASIN) IBIAS(max) IBIAS(min) IBIAS(dis) 2003 Jun 05 source current at pin BIASIN maximum bias current minimum bias current bias current at disable VBIASIN = 0.5 to 1.5 V VBIASIN = 1.8 V VBIASIN = 0 to 0.4 V VENABLE < 0.8 V 11 90 95 -110 100 - - 110 110 -100 - 0.2 - 125 130 -95 - 0.4 30 mA/V mA/V A mA mA A - 200
Control loop bias output: pin BIASOUT Isource(BIASOUT) source current Isink(BIASOUT) sink current - 200 - - -200 - A A
Bias current source: pins BIASIN and BIAS gm(bias) bias transconductance
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
SYMBOL VBIAS
PARAMETER
CONDITIONS VCCO = 3.3 V VCCO = 5 V
MIN. 0.4 0.8 - -
TYP.
MAX. 3.6 4.1
UNIT V V
output voltage on pin BIAS normal operation
Modulation current source: pin MODIN gm(mod) modulation transconductance VMODIN = 0.5 to 1.5 V VLA = VLAQ = VCCO = 3.3 V VLA = VLAQ = VCCO = 4.5 V Isource(MODIN) source current at pin MODIN VMODIN = 0.5 to 1.5 V 78 80 -110 90 95 -100 105 110 -95 mA/V mA/V A
Modulation current outputs: pins LA Io(LA)(max)(on) maximum laser modulation output current at LA on VMODIN = 1.8 V; VLA = VCCO = 3.3 V; note 4 100 - - mA
Io(LA)(min)(on) Io(LA)(min)(off)
minimum laser modulation VMODIN = 0 to 0.4 V; output current at LA on VLA = VCCO = 3.3 V; note 4 minimum laser modulation VLA = VCCO = 3.3 V; note 4 output current at LA off VMODIN = 0.5 V VMODIN = 1.5 V output impedance pins LA and LAQ non-inverted and inverted laser modulation output current at disable VENABLE < 0.8 V
-
5
6
mA
- - 80 -
- - 100 -
0.8 2 125 200
mA mA A
Zo(LA), Zo(LAQ) Io(LA)(dis), Io(LAQ)(dis) Vo(LA)min
minimum output voltage at TZA3047A; VCCO = 3.3 V pin LA TZA3047B; VCCO = 3.3 V TZA3047B; VCCO = 5 V
1.6 1.2 1.6 - 2.0 16 - 2.0 7
- - - - - 20 - - 10
- - - 0.8 - 30
V V V
Enable function: pin ENABLE VIL VIH Rpu(int) VIL VIH Rpd(int) LOW-level input voltage HIGH-level input voltage internal pull-up resistance bias and modulation currents disabled bias and modulation currents enabled V V k
Alarm reset: pin ALRESET LOW-level input voltage HIGH-level input voltage internal pull-down resistance no reset reset 0.8 - 15 V V k
2003 Jun 05
12
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
SYMBOL
PARAMETER
CONDITIONS IMAXOP = 10 to 200 A Ioper(alarm) = 7.5 to 150 mA VCCO = 3.3 V VCCO = 5.0 V IALOP = 500 A
MIN.
TYP.
MAX.
UNIT
Alarm operating current: pins MAXOP and ALOP Vref(MAXOP) NMAXOP reference voltage on pin MAXOP ratio of Ioper(alarm) and IMAXOP drain voltage at active alarm 1.15 1.2 1.25 V
700 750 0
800 850 -
900 950 0.4 V
VD(ALOP)L
Alarm monitor current: pins MAXMON and ALMON Vref(MAXMON) NMAXMON VD(ALMON)L reference voltage on pin MAXMON ratio of IMON(alarm) and IMAXMON drain voltage at active alarm IMAXMON = 10 to 200 A IMON(alarm) = 150 to 3000 A IALMON = 500 A 1.15 10 0 1.2 15 - 1.25 20 0.4 V V
Reference block: pins RREF and VTEMP VRREF VVTEMP TCVTEMP Isource(VTEMP) Isink(VTEMP) Notes 1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus the laser diode voltage which results in a lower total power dissipation. 2. The specification of the offset voltage is guaranteed by design. 3. Any (AVR, ER) setting needs to respect 50 A < IMON < 2 500 A. Therefore, for large ER settings, minimum/maximum AVR cannot be reached. 100 4. The relation between the sink current Io(LA) and the modulation current Imod is: l o(LA) = I mod x ------------------------------- where 100 + Z L ( LA ) ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and the 100 internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 will result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real application load. 5. VVTEMP = 1.31 + TCVTEMP x Tj and Tj = Tamb + Ptot x Rth(j-a). reference voltage temperature dependent voltage temperature coefficient of VVTEMP source current of pin VTEMP sink current of pin VTEMP RRREF = 10 k (1%); CRREF < 100 pF Tj = 25 C; CVTEMP < 2 nF; note 5 Tj = -25 to +125 C; note 5 1.15 1.15 - - 1 1.20 1.20 -2.2 - - 1.25 1.25 - -1 - V V mV/K mA mA
2003 Jun 05
13
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
11 AC CHARACTERISTICS Tamb = -40 to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL RF path BR JLA(p-p) tr tf tsu(D) th(D) ten(start) Current control tcint internal time constant dual-loop control operating currents fully settled 30 - - ms bit rate jitter of pin LA output signal (peak-to-peak value) rise time of voltage on pin LA fall time of voltage on pin LA data input set-up time data input hold time start-up time at enable direct current setting RL = 25 ; note 1 20% to 80%; RL = 25 ; note 2 80% to 20%; RL = 25 ; note 2 0.03 - - - 60 60 - - - 120 120 - - - 1.25 30 150 150 - - 1 Gbits/s ps ps ps ps ps s PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pulse width adjustment tPWA(min) tPWA tPWA(max) Notes 1. The output jitter specification is guaranteed by design. 2. For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection. minimum pulse width adjustment on pins LA pulse width adjustment on pins LA maximum pulse width adjustment on pins LA RPWA = 6.7 k; CPWA < 100 pF RPWA = 10 k; CPWA < 100 pF RPWA = 20 k; CPWA < 100 pF - - - -100 0 100 - - - ps ps ps
2003 Jun 05
14
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
12 APPLICATION INFORMATION 12.1 12.1.1 Design equations BIAS AND MODULATION CURRENTS
handbook, halfpage
TZA3047A; TZA3047B
105 Imod = Io(LA) (mA)
The bias and modulation currents are determined by the voltages on pins BIASIN and MODIN. These voltages are applied by the BIASOUT and MODOUT pins for dual-loop control. For average loop control the BIASIN voltage is applied by the BIASOUT pin and the MODIN voltage is applied by an external voltage source or an external resistor RMODIN. For direct setting of bias and the modulation current, the BIASIN and MODIN voltages have to be applied by external voltage sources or by RBIASIN and RMODIN external resistors connected on BIASIN and MODIN pins: IBIAS = (RBIASIN x 100 A - 0.5 V) x gm(bias) [mA] Imod = (RMODIN x 100 A - 0.5 V) x gm(mod) + 5 [mA] The bias and modulation current sources operate with an input voltage range from 0.5 to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V; see Figs 3 and 4. The bias and modulation current sources are temperature compensated and the adjusted current level remains stable over the temperature range. The bias and modulation currents increase with increasing resistor values for RBIASIN and RMODIN respectively, this allows resistor tuning to start at a minimum current level.
gm(mod) = 100 mA/V
5 0 0.5 VMODIN (V) 1.5
MGT891
I o(LA)(min)
LA current when LA output is on. Vo(LA) = VCCO.
Fig.4
Modulation current as a function of MODIN voltage.
12.1.2
AVERAGE MONITOR CURRENT AND EXTINCTION
RATIO
The average monitor current Iav(MON) in dual-loop or average loop operation is determined by the source current (IAVR) of the AVR pin. The current can be sunk by an external current source or by an external resistor (RAVR) connected to ground: V AVR Iav(MON) = 1580 - 5.26 x IAVR =1580 - 5.26 x ------------- [A] R AVR The extinction ratio in dual-loop operation is determined by the source current (IER) of the ER pin. The current can be sunk by an external current source or by an external resistor (RER) connected to ground:
handbook, halfpage
110 I BIAS (mA) gm(bias) = 110 mA/V
V ER I ER 1 ER = 20 - -------------- = 20 - ------------ x ---------2 A R ER 2 A The average monitor current and the extinction ratio as a function of the IAVR and IER current are illustrated in Fig.5.
0.2 0
I BIAS(min) 0.5 VBIASIN (V) 1.5
MGT890
The average monitor current increases with a decreasing IAVR or increasing RAVR, this allows resistor tuning of RAVR to start at minimum IAVR current level. The formulas used to program AVR and ER are valid for typical conditions; tuning is necessary to achieve good absolute accuracy of AVR and ER values. 15
Fig.3 Bias current as a function of BIASIN voltage.
2003 Jun 05
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
handbook, full pagewidth
I av(MON) ER (A) 1500 15
I ER = 20 - ER 2 A 5
I av(MON) = 1580 - 5.26 x IAVR A
30 0
10 15 30
I AVR (A) I ER (A)
295
MGT892
Fig.5 Average monitor current and extinction ratio as a function of IAVR and IER.
12.1.3
DUAL-LOOP CONTROL
The dual-loop control measures the monitor current (IMON) corresponding with an optical `one' level and the IMON corresponding with the optical `zero' level. The measured IMON(one) and IMON(zero) are compared with the average monitor current setting and the extinction ratio setting according to: I MON(one) + I MON(zero) I av(MON) = ---------------------------------------------------2 I MON(one) ER = ----------------------I MON(zero) The dual-loop controls the bias and the modulation current for obtaining the IMON(one) and IMON(zero) current levels which correspond with the programmed AVR and ER settings.
Performance of the dual-loop for high data-rate is linked to the quality of the incoming IMON signal: a high performance interconnection between monitor photodiode and MON input is requested for maximum data rate applications (1.25 Gbits/s). The operational area of the dual-loop and the control area of the monitor input current must respect the following equations: 50 A < I MON(zero) < 500 A 250 A < I MON(one) < 2500 A Stability of ER and AVR settings are guaranteed over a range of temperature and supply voltage variations.
2003 Jun 05
16
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
12.1.4 ALARM OPERATING CURRENT 12.1.5
TZA3047A; TZA3047B
ALARM MONITOR CURRENT
The alarm threshold Ioper(alarm) on the operating current is determined by the source current IMAXOP of the MAXOP pin. The current range for IMAXOP is from 10 to 200 A which corresponds with an Ioper(alarm) from 7.5 to 150 mA. The IMAXOP current can be sunk by an external current source or by connecting RMAXOP to ground: V MAXOP I oper(alarm) = N MAXOP x -------------------R MAXOP The operating current equals the bias current for an AC-coupled laser application and equals the bias current plus half of the modulation current for the DC-coupled laser application: I oper ( TZA3047A ) = I BIAS I oper ( TZA3047B ) I mod = I BIAS + --------2
The alarm threshold IMON(alarm) on the monitor current is determined by the source current IMAXMON of the MAXMON pin. The current range for IMAXMON is from 10 to 200 A which corresponds with an IMON(alarm) from 150 to 3000 A. The IMAXMON current can be sunk by an external current source or by connecting RMAXMON to ground: V MAXMON I MON(alarm) = N MAXMON x -----------------------R MAXMON 12.1.6 PULSE WIDTH ADJUSTMENT
The pulse width adjustment time is determined by the value of resistor RPWA, as shown below. R PWA - 10 k t PWA = 200 x ------------------------------------ [ps] R PWA The tPWA range is from -100 to +100 ps which corresponds with a RPWA range between a minimum resistance of 6.7 k and a maximum resistance of 20 k. The PWA function is disabled when the PWA input is short-circuited to ground; tPWA equals 0 ps for a disabled PWA function.
handbook, halfpage
100 t PWA (ps) 6.7 10 R PWA (k) 20
0
-100
MGT893
Fig.6 Pulse width adjustment.
2003 Jun 05
17
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
12.2 TZA3047A with dual-loop control
TZA3047A; TZA3047B
A simplified application using the TZA3047A with dual-loop control and with an AC-coupled laser at 3.3 V laser voltage is illustrated in Fig.7. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The alarm threshold on the operating current is made temperature dependent with resistor RVTEMP connected between VTEMP and MAXOP. This alarm detects the end of life of the laser. V MAXOP TC VTEMP x ( T j - 25 C ) I oper(alarm) = N MAXOP x -------------------- - -------------------------------------------------------------- - R MAXOP R VTEMP The resistor RPWA enables pulse width adjustment for optimizing the eye diagram.
handbook, full pagewidth
3.3 V MODOUT BIASOUT
MODIN
BIASIN
VCCO
3.3 V 3.3 V
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9
32
31
30
29
28
27
MON
AVR
ER
laser with monitor diode
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND
TZA3047A
21 20 19 18
ALRESET
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17 PWA
MDB317
Fig.7 TZA3047A with AC-coupled laser and dual-loop control.
2003 Jun 05
18
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
12.3 TZA3047B with dual-loop control
TZA3047A; TZA3047B
A simplified application using the TZA3047B with dual-loop control and with a DC-coupled laser at 3.3 V or 5 V laser voltage is illustrated in Fig.8. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing an active alarm to disable the bias and modulation current sources. The ALRESET input will reset the alarm latches and enable normal operation.
handbook, full pagewidth
3.3 V or 5 V MODOUT BIASOUT
MODIN
BIASIN
3.3 V 3.3 V
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9
32
31
30
29
28
27
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND
TZA3047B
21 20 19 18
ALRESET
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17 PWA
MDB316
Fig.8 TZA3047B with DC-coupled laser and dual-loop control.
2003 Jun 05
19
VCCO
MON
laser with monitor diode
AVR
ER
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
12.4 TZA3047B with average loop control
TZA3047A; TZA3047B
A simplified application using the TZA3047B with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage is illustrated in Fig.9. The ER pin is short-circuited to ground for the average loop control. The average power level is determined by the resistor RAVR. The average loop controls the bias current and the BIASOUT output is connected to the BIASIN input. The modulation current is determined by the MODIN input voltage which is generated by the resistor RMODIN and the 100 A source current of the MODIN pin.
handbook, full pagewidth
3.3 V or 5 V MODOUT BIASOUT
MODIN
BIASIN
3.3 V 3.3 V
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9
32
31
30
29
28
27
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND
TZA3047B
21 20 19 18
ALRESET
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17 PWA
VCCO
MON
laser with monitor diode
AVR
ER
MDB315
Fig.9 TZA3047B with DC-coupled laser and average loop control.
2003 Jun 05
20
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
13 BONDING PAD LOCATIONS SYMBOL VCCA VCCA VCCD VCCD DIN DINQ GNDRF GNDRF GNDRF GNDRF TEST CIN CINQ GNDESD ALRESET ENABLE GNDDFT ALOP ALMON i.c. MAXOP i.c. VTEMP MAXMON RREF GNDRF PWA GNDO LAQ LAQ LAQ LAQ GNDO i.c. GNDO GNDO LA i.c. PAD(2)(3) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20(4) 21 22(4) 23 24 25 26 27 28 29 30 31 32 33 34(4) 35 36 37 38(4) COORDINATES(1) x -1123.9 -1123.9 -1123.9 -1123.9 -1124.0 -1124.9 -1123.9 -1123.9 -1123.9 -1123.9 -1123.4 -1123.9 -1123.9 -1123.9 -1123.9 -829.8 -665.6 -504.9 -267.6 -221.5 -98.5 -48.6 +294.0 +466.9 +694.9 +860.3 +1098.9 +1099.0 +1099.0 +1099.0 +1099.0 +1099.0 +1099.8 +839.0 +1099.8 +1099.8 1099.1 839.0 y +1029.3 +949.3 +844.3 +764.3 +604.3 +393.3 +244.5 +139.4 +4.7 -100.3 -253.4 -441.2 -697.1 -850.8 -991.4 -1123.7 -1124.0 -1124 -1124.3 -344.4 -1124.3 -368.4 -1124.2 -1124.2 -1124.0 -1124.0 -979.4 -829.7 -691.2 -611.2 -506.4 -426.4 -247.0 -194.4 -142.0 -36.8 105.4 179.6 SYMBOL LA LA LA GNDO BIAS VCCO VCCO ACDC GNDESD MON BIASIN BIASOUT GNDCCB MODIN GNDCCB i.c. MODOUT ER AVR Notes
TZA3047A; TZA3047B
PAD(2)(3) 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54(4) 55 56 57
COORDINATES(1) x 1099.1 1099.1 1099.1 1099.1 1099.0 1099.0 1099.0 942.5 765.0 602.1 431.7 267.6 100.8 -82.7 -241.1 -274.4 -487.2 -645.6 -802.8 y 185.4 290.5 370.5 670.8 804.8 944.4 1024.4 1124.3 1123.8 1123.7 1123.8 1123.8 1123.8 +1123.8 +1123.8 +954.4 +1123.8 +1123.8 +1123.8
1. All coordinates are referenced (in m) to the centre of the die. 2. All GND connections should be used. 3. Recommended order of bonding: all GND first, then VCCA, VCCD and VCCO supplies and finally the input and output pins. 4. Pad is internally connected, do not use.
2003 Jun 05
21
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
TZA3047A; TZA3047B
handbook, full pagewidth
2.56 mm MODOUT BIASOUT GNDCCB GNDCCB GNDESD 47 MODIN BIASIN ACDC 46 45 44 43 42 41 40 39 37 36 0 i.c. 34 y i.c. 20 i.c. 22 35 33 32 31 30 29 28 27 16 ENABLE 17 GNDDFT 18 ALOP 19 ALMON 21 MAXOP 23 VTEMP 24 MAXMON 25 RREF 26 GNDRF
MDB319
57 VCCA VCCA VCCD VCCD DIN DINQ GNDRF GNDRF GNDRF GNDRF TEST CIN CINQ GNDESD ALRESET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
56
55 i.c. 54
53
52
51
50
49
48
MON
AVR
ER
VCCO VCCO BIAS GNDO LA LA LA LA GNDO GNDO GNDO LAQ LAQ LAQ LAQ GNDO PWA 2.51 mm
i.c. 38 x 0
TZA3047UH
Fig.10 TZA3047UH die.
Table 1
Physical characteristics of the bare die PARAMETER VALUE 0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m of silicon nitride minimum dimension of exposed metallization is 80 x 80 m (pad size = 90 x 90 m) 2.8 m AlCu 380 m nominal 2.560 x 2.510 mm (6.43 mm2) silicon; electrically connected to GND potential through substrate contacts <440 C; recommended die attachment is by gluing <15 s
Glass passivation Bonding pad dimension Metallization Thickness Size Backing Attach temperature Attach time
2003 Jun 05
22
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
14 PACKAGE OUTLINE
TZA3047A; TZA3047B
HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1
D
xB
b1
vMCAB wMC vMCAB wMC
ball A1 index area
b
E
b3 vMCAB wMC b2 detail X vMCAB wMC
xC B e C e1 vA
A y
e2
E1 e4
1 32 D1 e3 X A2 A 0 2.5 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 0.8 A1 0.10 0.05 A2 0.7 0.6 b 0.35 0.20 b1 0.5 0.3 b2 0.50 0.35 b3 0.50 0.35 D 5.1 4.9 D1 3.2 3.0 E 5.1 4.9 E1 3.2 3.0 e 0.5 e1 4.2 e2 4.2 e3 4.15 e4 4.15 v 0.2 w 0.15 x 0.15 y 0.05 5 mm A1
OUTLINE VERSION SOT560-1
REFERENCES IEC JEDEC MO-217 JEITA
EUROPEAN PROJECTION
ISSUE DATE 00-02-01 03-03-12
2003 Jun 05
23
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
15 SOLDERING 15.1 Introduction to soldering surface mount packages
TZA3047A; TZA3047B
To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 15.4 Manual soldering
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 15.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferably be kept: * below 220 C for all the BGA packages and packages with a thickness 2.5mm and packages with a thickness <2.5 mm and a volume 350 mm3 so called thick/large packages * below 235 C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. 15.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2003 Jun 05
24
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
15.5
TZA3047A; TZA3047B
Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE(1) SOLDERING METHOD WAVE REFLOW(2) suitable suitable suitable suitable suitable
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP Notes
not suitable not suitable(3)
suitable not not recommended(4)(5) recommended(6)
1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 Jun 05
25
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
16 DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
TZA3047A; TZA3047B
DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17 DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18 DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jun 05
26
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers
Bare die All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
TZA3047A; TZA3047B
2003 Jun 05
27
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/01/pp28
Date of release: 2003
Jun 05
Document order number:
9397 750 11277

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